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| SMD Type NPN Silicon Transistor 2SC5343SF SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 Low output capacitance:Cob=2pF(Typ.) +0.1 1.3-0.1 Low collector saturation voltage: VCE=0.25V(Max.) 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 60 50 5 150 200 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Transition frequency Output capacitance Noise figure Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE IC=100iA Testconditons , IE=0 Min 60 50 5 Typ +0.1 0.38-0.1 0-0.1 Max Unit V V V IC=1mA , IB=0 IE=10iA, IC=0 VCB=60V, IE=0 VEB=5V, IC=0 VCE=6V, IC=2mA 0.1 0.1 70 700 0.25 80 2 3.5 10 iA iA VCE(sat) IC/IB=100mA/10mA fT Cob NF VCE=10V, IC=1mA, VCB=10V, IE=0, f=1MHz VCE=6V, IC=0.1mA, f=1KHz, Rg=10kU V MHz pF dB hFE Classification Marking Rank hFE O 70 140 Y 120 240 DA G 200 400 L 300 700 www.kexin.com.cn 1 |
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